FDN8601 - описание и поиск аналогов

 

FDN8601. Аналоги и основные параметры

Наименование производителя: FDN8601

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.3 ns

Cossⓘ - Выходная емкость: 47 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.109 Ohm

Тип корпуса: SSOT3

Аналог (замена) для FDN8601

- подборⓘ MOSFET транзистора по параметрам

 

FDN8601 даташит

 ..1. Size:158K  fairchild semi
fdn8601.pdfpdf_icon

FDN8601

July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform

 ..2. Size:272K  onsemi
fdn8601.pdfpdf_icon

FDN8601

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:270K  fairchild semi
fdn86265p.pdfpdf_icon

FDN8601

May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch

 9.2. Size:683K  fairchild semi
fdn86501lz.pdfpdf_icon

FDN8601

April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),

Другие MOSFET... FDN359BN , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , IRFZ24N , STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 .

 

 

 

 

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