2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous: ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drain3. Source123

2SK2734Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-520 (Z)1st. EditionJun 1997Features Low on-resistanceRDS(on) = 0.04 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SK2734Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un

2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 8.0 (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous: ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drain3. Source123 S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L)-

2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous: ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drain3. Source123 SRev.4.00 Sep 07, 200

TransistorsSwitching (300V, 16A)2SK2739FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channelMOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specificati

TransistorsInterface and switching (30V, 200mA)2SK2731FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Low-voltage drive (4V).4) Easily designed drive circuits.5) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit146Transistors 2SK2731FElectrical characteristics (Ta

SMD Type MOSFETN-Channel MOSFET2SK2731SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V1 2 ID = 0.2 A +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 2.8 (VGS = 10V) RDS(ON) 4.5 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

SMD Type MOSFETN-Channel MOSFET2SK2731SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V1 2 ID = 0.2 A+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 2.8 (VGS = 10V) +0.11.9 -0.2 RDS(ON) 4.5 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

2SK2738www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Paramete