FDP047N08 - Аналоги. Основные параметры
Наименование производителя: FDP047N08
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 268 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 164 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
Тип корпуса: TO220
Аналог (замена) для FDP047N08
FDP047N08 технические параметры
fdp047n08.pdf
March 2008 FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain super
fdp047n08.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp047n10.pdf
August 2008 FDP047N10 tm N-Channel PowerTrench MOSFET 100V, 164A, 4.7m Description General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advance PowerTrench process that has been especially Fast switching speed tailored to minimize the on-state resistance and yet maintain superior switch
Другие MOSFET... FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , STM4637 , IRF830 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 .
History: SIHG22N60E
History: SIHG22N60E
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