FDP047N08
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP047N08
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 268
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 164
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 117
nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0047
Ohm
Тип корпуса:
TO220
Аналог (замена) для FDP047N08
FDP047N08
Datasheet (PDF)
..1. Size:526K fairchild semi
fdp047n08.pdf 
March 2008FDP047N08tmN-Channel PowerTrench MOSFET 75V, 164A, 4.7mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain super
..2. Size:698K onsemi
fdp047n08.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:284K inchange semiconductor
fdp047n08.pdf 
isc N-Channel MOSFET Transistor FDP047N08FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
7.1. Size:536K fairchild semi
fdp047n10.pdf 
August 2008FDP047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch
7.2. Size:908K onsemi
fdp047n10.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.3. Size:283K inchange semiconductor
fdp047n10.pdf 
isc N-Channel MOSFET Transistor FDP047N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
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