Справочник MOSFET. NTMFD5C470NLT1G

 

NTMFD5C470NLT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFD5C470NLT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 24 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
   Тип корпуса: DFN8-5X6

 Аналог (замена) для NTMFD5C470NLT1G

 

 

NTMFD5C470NLT1G Datasheet (PDF)

 0.1. Size:205K  1
 ntmfd5c470nlt1g.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V

 2.1. Size:205K  onsemi
 ntmfd5c470nl.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V

 6.1. Size:206K  1
 ntmfd5c466nlt1g.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V

 6.2. Size:192K  1
 ntmfd5c466nt1g.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value

 6.3. Size:192K  onsemi
 ntmfd5c466n.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value

 6.4. Size:207K  onsemi
 ntmfd5c446nl.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C446NLMOSFET Power, Dual,N-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.65 mW @ 10 V40 VCompliant145 A3.9 mW @ 4.5

 6.5. Size:206K  onsemi
 ntmfd5c466nl.pdf

NTMFD5C470NLT1G NTMFD5C470NLT1G

NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V

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