NTMFS1D15N03CGT1G - описание и поиск аналогов

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 mW, 245 A NTMFS1D15N03CG Features Advanced Package (5x6 mm) with Excellent Thermal Conduction www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 mW, 245 A NTMFS1D15N03CG Features Advanced Package (5x6 mm) with Excellent Thermal Conduction www.onsemi.com Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 30 V 1.15 mW @ 10 V 245 A Hot Swap Application Power Load

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.74 mW, 170 A NTMFS1D7N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6 mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 1.74 mW @ 1

NTMFS5C442NL Power MOSFET 40 V, 2.5 mW, 130 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.5 mW @ 10 V 40

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delive

NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60

NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par

NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth

MOSFET Power, Single, N-Channel 60 V, 1.6 mW, 230 A NTMFS5C612N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 1.6 mW @ 10 V 230 A MAXIMUM RATINGS (TJ = 25 C unless otherw

NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

NTMFS5C430NL Power MOSFET 40 V, 1.4 mW, 200 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.4 mW @ 10 V 40

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 131 A NTMFS3D6N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET 3.6 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC 100 V 131 A 5.8 mW @ 4.5 V

MOSFET Power, Single, N-Channel 40 V, 3.7 mW, 87 A NTMFS5C456NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.7 mW @ 10 V 40 V 87 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

NTMFS23D9N06HL Power MOSFET 60 V, 23.9 mW, 23 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen-Free / BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 23.9 mW @ 10 V 60 V

MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (

NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 4.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unles

NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V 40

MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 378 A NTMFS5C404N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.7 mW @ 10 V 378 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V

NTMFS6B05N MOSFET Power, Single, N-Channel 100 V, 8 mW, 104 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 8 mW @ 10 V 104 A Compliant MAXIMUM RATINGS (TJ

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MOSFET - Power, Single N-Channel 120 V, 6.0 mW, 93 A NTMFS006N12MC Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Soft Body Diode Reduces Voltage Ringing 6.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are

MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NTMFS5C468NL MOSFET Power, Single, N-Channel 40 V, 10.3 mW, 37 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10.3 mW @ 10 V 40 V 37 A MAXIMUM RATINGS (TJ = 25 C unless ot

MOSFET Power, Single, N-Channel 60 V, 1.2 mW, 287 A NTMFS5C604NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.2 mW @ 10 V 60 V 287 A 1.7 mW @ 4.5 V MAXIMUM RATINGS (TJ =

NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 mW Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product 12 mW @ 10 V 60 V 61 A NVMFS Prefix for Automotive and

NTMFS5C460NL Power MOSFET 40 V, 4.5 mW, 78 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.5 mW @ 10 V 40 V

NTMFS6B14N MOSFET Power, Single, N-Channel 100 V, 15 mW, 50 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 100 V 15 mW @ 10 V 50 A Compliant MAXIMUM RATINGS (TJ

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

NTMFS4C06N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V Compliant 30 V 69 A 6.0 mW @ 4.5 V A

NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

NTMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Va

NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

MOSFET Power, Single, N-Channel 40 V, 0.67 mW, 370 A NTMFS5C404NLT Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NTMFS5C404NLTWF - Wettable Flank Option for Enhanced 0.67 mW @ 10 V 40 V 370 A Optical Inspection 1.0 mW @ 4.

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not

NTMFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 7.2 mW @ 10 V CPU Power Deli

NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Not

NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55

NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note

NTMFS5C430N Power MOSFET 40 V, 1.7 mW, 185 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Va

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A 13.5 mW @ 4.5 V Applications Notebooks, Graphics Cards DC-DC Converters N-Channel Synchronou

NTMFS4C054N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 80 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.54 mW @ 10 V 30 V 80 A Compliant 3.56 mW @ 4.5 V

NTMFS4744N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10 mW @ 10 V CPU Power Delivery 30 V 53 A 14 mW @ 4.5 V DC-DC Conver

NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Com

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V

NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delive

NTMFS4927N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9.0 m

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 m

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V

NTMFS5H425NL MOSFET Power, Single, N-Channel 40 V, 2.8 mW, 118 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.8 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application No

MOSFET Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.7 mW @ 10 V 30 V Compliant 136 A 2.4 mW

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 mW, 33 A NTMFS016N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 15.6 mW @ 10 V 33 A Applications

NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application Not

NTMFS4C029N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.88 mW @ 10 V Compliant 30 V 46 A 9.0 mW @ 4.5 V

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU P

NTMFS5H419NL MOSFET Power, Single, N-Channel 40 V, 2.1 mW, 155 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CPU

NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V

NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http //onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low G

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) http //onsemi.com Low Capacitance Optimized Gate Charge V(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A Qualified and PPAP Capable 13.6 mW @ 4.5 V

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP

NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application N

NTMFS4C10N Power MOSFET 30 V, 46 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delive

MOSFET - Power, Single N-Channel, DUAL COOL), DFN8 5x6 40 V, 0.85 mW, 313 A NTMFSC0D9N04CL www.onsemi.com Features Advanced Dual-Sided Cooled Packaging VSSS RSS(ON) MAX ID MAX Ultra Low RDS(on) to Minimize Conduction Losses 0.85 mW @ 10 V MSL1 Robust Packaging Design 40 V 313 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1.3 mW @ 4.5 V Compliant

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery 3

NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

NTMFS4925N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

MOSFET Power, Single, N-Channel, Logic Level, SO-8FL 30 V, 0.67 mW, 370 A NTMFS4C020N www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices

NTMFS5C682NL MOSFET Power, Single, N-Channel 60 V, 21 mW, 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 21 mW @ 10 V 60 V 25 A Compliant 31.5 mW @ 4.5 V MA

NTMFS4744N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10 mW @ 10 V CPU Power Delivery 30 V 53 A 14 mW @ 4.5 V DC-DC Conver

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.6 m

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU Po

NTMFS4927N, NTMFS4927NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 7.3 mW @ 10 V 30 V 38 A These Devices are Pb-Free, Haloge

NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A

NTMFS5C468NL MOSFET Power, Single, N-Channel 40 V, 10.3 mW, 37 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10.3 mW @ 10 V 40 V 37 A MAXIMUM RATINGS (TJ = 25 C unless ot

NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen

NTMFS4C09N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.8 mW @ 10 V Applications 30 V 52 A 8.5 mW @

NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.5

NTMFS5113PL Power MOSFET -60 V, 14 mW, -64 A, Single P-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) ID 14 mW @ -10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) -60 V -64 A 22 mW @ -4.5 V P

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @

NTMFS5H431NL MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 106 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.3 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

MOSFET Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6

NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU P

NTMFS5C442N Power MOSFET 40 V, 2.3 mW, 140 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Va

NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par

NTMFS4926N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 44 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.1 mW @ 10 V CPU Power Del

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V

NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery 5.8 mW @ 10

NTMFS4934N Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 2.0 mW @ 10 V Applications 30 V 147 A 3.0

NTMFS4C35N Power MOSFET 30 V, 80 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.2 mW @ 10 V Applications 30 V 80 A 4.0 mW

NTMFS4925NE Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http //onsemi.com New Package Provides Capability of Inspection and Probe After Board Mounting V(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 6.0 mW @ 10 V O

NTMFS5C442NL Power MOSFET 40 V, 2.8 mW, 121 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V

NTMFS4982NF Power MOSFET 30 V, 207 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 1.3 mW @ 10 V Serv

NTMFS4C025N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V 30 V 69 A Compliant 4.88 mW @ 4.5 V

NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features Fast Switching Times Low Gate Charge http //onsemi.com Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices Applications 7.3 mW @ 10 V 30 V 19 A Notebooks, Graphics Cards 10.1 mW @ 4.5 V DC-DC Converters Synchronous Rectification N

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) T

NTMFS4939N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 53 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V Compliant 30 V 53 A 8.0 mW @ 4.5 V

NTMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 1.2 mW @ 10 V 60

NTMFS5844NL Power MOSFET 60 V, 60 A, 12 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 12 mW @ 10 V 60 V 60 A Parameter Symbol Value Unit 16 mW @ 4.5 V Drain-to-Source Voltage VDS

MOSFET Power, Single, N-Channel 60 V, 5.0 mW, 93 A NTMFS5C646N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 60 V 5.0 mW @ 10 V 93 A Compliant MAXIMUM RATINGS (T

NTMFS5H400NL MOSFET Power, Single, N-Channel 40 V, 0.80 mW, 330 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.80 mW @ 10 V 40 V 330 A MAXIMUM RATINGS (TJ = 25 C unless

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances www.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on)

MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.2 mW @ 10 V 80 V MAXIMUM RATINGS (TJ = 25 C unless otherwise not

NTMFS4933N Power MOSFET 30 V, 210 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information 1.2

MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 131 A NTMFS3D6N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET 3.6 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC 100 V 131 A 5.8 mW @ 4.5 V

NTMFS4C09N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.8 mW @ 10 V 30 V 52 A Compliant 8.5 mW @ 4.5 V A

MOSFET- Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 60 V 19.6 mW @ 10 V 28 A Applications

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 30 V 171 A Applications 3.0 mW @ 4.5 V C

NTMFS4852N Power MOSFET 30 V, 155 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 2.1 mW @ 10 V Refer to Application Note AND8195/D 30 V 155 A CPU Po

NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 mW, 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 200 A 2.2 mW @ 4.5 V MAXIMUM RATINGS (TJ =

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NTMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 7.0 mW @ 10 V 71 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

MOSFET Power, Single, N-Channel 60 V, 1.3 mW, 250 A NTMFS5H600NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.3 mW @ 10 V 60 V 250 A MAXIMUM RATINGS (TJ = 25 C unless ot

NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A

NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 3.5 mW @ 10 V 30 V 31 A Notebooks, Graphics Cards 4.2 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NTMFS6H836N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 80 V 6.7 mW @ 10 V 80 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS4C250N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 69 A Compliant 6.0 mW @ 4.5 V A

NTMFS6H818N MOSFET Power, Single, N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 3.7 mW @ 10 V 123 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Low Inductance SO-8 Package These are Pb-Free Devices ID MAX V(BR)DSS RDS(on) TYP (Note 1) Applications 4.6 mW @ 10 V Notebooks, Graphics Cards 30 V 23 A 6.3 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXIMUM RATINGS (TJ = 25 C unl

NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N-Channel Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring 9.3 mW @ 10 V Unique Site and Control Change Requirements; AEC-Q101 40 V 75 A 13.6

NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NTMFS6H864NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 2.0 mW @ 10 V 30 V 191 A CPU Po

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m

NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http //onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1

NTMFS5C673NL Power MOSFET 60 V, 9.2 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 9.2 mW @ 10 V 60 V

NTMFS4C032N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.35 mW @ 10 V Compliant 30 V 38 A Applications 1

NTMFS4C027N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.8 mW @ 10 V 30 V 52 A Applications 7.4

NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application No

NTMFS4854NS SENSEFET Power MOSFET 25 V, 149 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.5

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NTMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 60 V 10.7 mW @ 10 V 50 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS5C460NL Power MOSFET 40 V, 4.5 mW, 78 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.5 mW @ 10 V 40 V

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

NTMFS4955N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives 5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V 30 V 191 A

NTMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol V

NTMFS5844NL, NVMFS5844NL MOSFET Power, Single, N-Channel 60 V, 61 A, 12 mW Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5844NLWF - Wettable Flanks Product 12 mW @ 10 V 60 V 61 A NVMFS Prefix for Automotive and

NTMFS4923NE Power MOSFET 30 V, 91 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3.3 mW @ 10 V 91 A

NTMFS5C404NLT Power MOSFET 40 V, 0.75 mW, 352 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C404NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Co

NTMFS6H800N MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 2.1 mW @ 10 V 203 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 4.2 mW @

NTMFS5C677NL Power MOSFET 60 V, 15.0 mW, 36 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol V

MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NTMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.7 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @

NTMFS4926NE Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate Drives V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 8.8 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4

NTMFS5H610NL MOSFET Power, Single, N-Channel 60 V, 10 mW, 44 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @ 10 V 60 V 44 A MAXIMUM RATINGS (TJ = 25 C unless otherw

NTMFS4922NE Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.0 mW @

NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C

NTMFS5C628NL Power MOSFET 60 V, 2.4 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.4 mW @ 10 V 60

NTMFS4937N Power MOSFET 30 V, 70 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V CPU Power Del

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A CPU P

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

NTMFS6B14N Power MOSFET 100 V, 15 mW, 50 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

NTMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 6.1 mW @ 10 V 60 V

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

NTMFS4939N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V 30 V 53 A CP

MOSFET Power, Single, N-Channel 40 V, 3.7 mW, 87 A NTMFS5C456NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 3.7 mW @ 10 V 40 V 87 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS4936N Power MOSFET 30 V, 79 A, Single N-Channel, SO-8 FL Features Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http //onsemi.com Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON

NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow

NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5

NTMFS5C410NL Power MOSFET 40 V, 0.9 mW, 302 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.9 mW @ 10 V

NTMFS6B03N Power MOSFET 100 V, 4.8 mW, 132 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise not

NTMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.0 mW @ 10 V 60

NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery

NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices* 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m

NTMFS5C423NL Power MOSFET 40 V, 2.0 mW, 150 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.0 mW @ 10 V Par

www.onsemi.com NTMFS08N003C N-Channel Shielded Gate PowerTrench MOSFET 80 V, 147 A, 3.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 8.1 m

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 0.9 mW @ 10 V 30 V 303 A 1.2 mW @

NTMFS4936N, NTMFS4936NC MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 79 A Features http //onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses V(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft 3.8 mW @ 10 V Recovery, Provides Schottky-Like Performance 30 V 79 A The

NTMFS4121N Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 4.0 mW @ 10 V 30 V 29 A Notebooks, Graphics Cards 5.5 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

NTMFS4122N Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Low Inductance SO-8 Package This is a Pb-Free Device ID MAX Applications V(BR)DSS RDS(on) TYP (Note 1) Notebooks, Graphics Cards 4.6 mW @ 10 V DC-DC Converters 30 V 23 A 6.3 mW @ 4.5 V Synchronous Rectification MAXIMUM RATINGS (TJ = 25 C unless o

NTMFS4C028N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.73 mW @ 10 V 30 V 52 A Compliant 7.0 mW @ 4.5 V

NTMFS4897NF Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 2.0 mW @ 10 V CPU Power Delivery 30 V 171

NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 4.7 mW @ 10 V 60 V

NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.2 mW @ 10 V CPU Power Deli

NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.9 mW @ 10 V Refer to Application Note

NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C

NTMFS4121N Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 4.0 mW @ 10 V Applications 30 V 29 A 5.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters D Synchronous Rectification MAXI

NTMFS4983NF Power MOSFET 30 V, 106 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 2.1 mW @ 10 V Applications 30 V 10

MOSFET Power, Single, N-Channel 60 V, 3.1 mW, 120 A NTMFS5H630NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.9 mW @ 10 V Refer to Application Not

NTMFS5C609NL Power MOSFET 60 V, 1.36 mW, 250 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.36 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C un

NTMFS4934N Power MOSFET 30 V, 147 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 2.0 mW @ 10 V Applications 30 V 147 A 3.0

NTMFS4985NF Power MOSFET 30 V, 65 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.4 mW @ 10 V Applications 30 V 65

NTMFS4C024N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 78 A Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.8 mW @ 10 V 30 V 78 A Compliant 4.0 mW @ 4.5 V

NTMFS4931N Power MOSFET 30 V, 246 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control 1.1 mW @ 10 V Refer to Application Note AND8195/D for Mounting I

NTMFS6D1N08H MOSFET Power, Single, N-Channel 80 V, 5.5 mW, 89 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant 5.5 mW @ 10 V 80 V 89 A

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 2.3 mW @

NTMFS5H409NL MOSFET Power, Single, N-Channel 40 V, 1.1 mW, 270 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.1 mW @ 10 V 40 V 270 A MAXIMUM RATINGS (TJ = 25 C unless ot

NTMFS4941N Power MOSFET 30 V, 47 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.2 mW @ 10 V 30 V 47 A CP

NTMFS4H01N Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications

MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NTMFS5C404NL Power MOSFET 40 V, 0.75 mW, 339 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses http //onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 0.75 mW @ 10 V

NTMFS4823N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 10.5 mW @ 10 V 30 V 30 A CPU Pow

NTMFS4921N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 3

NTMFS4946N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delivery 30 V

MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NTMFS6H852NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 13.1 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.

NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.2 mW @ 10 V CPU Power Del

NTMFS5C404N MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 378 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 0.7 mW @ 10 V 378 A MAXIMUM RATINGS (TJ = 25 C unless other

NTMFS4898NF Power MOSFET 30 V, 117 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 3.0 mW @ 10 V

NTMFS4943N Power MOSFET 30 V, 41 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 7.2 mW @ 10 V CPU Power Deli

NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Not

NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements;

NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (

NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application

NTMFS4C302N MOSFET Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 mW, 230 A www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V(BR)DSS RDS(on) MAX ID MAX Low RDS(on) to Minimize Conduction Losses 1.15 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses 30 V 230 A 1.7 mW @ 4.5 V These Devices are Pb-Free, Halogen Free/BFR Free and a

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 60 V 3.0 mW @ 10 V 150 A MAXIMUM RATINGS (TJ = 25 C unless otherwis

NTMFS23D9N06HL Power MOSFET 60 V, 23.9 mW, 23 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen-Free / BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Typical Applications 23.9 mW @ 10 V 60 V

NTMFS5H615NL MOSFET Power, Single, N-Channel 60 V, 1.8 mW, 185 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.8 mW @ 10 V 60 V MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS5C442NLT Power MOSFET 40 V, 2.8 mW, 127 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com NTMFS5C442NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

NTMFS4926N Power MOSFET 30 V, 44 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 7.0 m

NTMFS4937N Power MOSFET 30 V, 70 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 4.5 mW @ 10 V CPU Power Del

NTMFS5H414NL MOSFET Single, N-Channel 40 V, 1.4 mW, 210 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 1.4 mW @ 10 V 40 V 210 A MAXIMUM RATINGS (TJ = 25 C unless otherwise

NTMFS4H02N Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances http //onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications 4.5

NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @ 4

NTMFS4925N Power MOSFET 30 V, 48 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 6.0 m

NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application No

NTMFS5C410NLT Power MOSFET 40 V, 0.9 mW, 315 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with http //onsemi.com Standard SOIC-8 New Package Provides Capability of Inspection and Probe After Board Mounting V(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 6.0 mW @ 10 V 30 V

NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Optimized Gate Charge Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ These are Pb-Free Devices (Note 1) Applications 3.5 mW @ 10 V 30 V 31 A Notebooks, Graphics Cards 4.2 mW @ 4.5 V DC-DC Converters Synchronous Rectification D MAXI

NTMFS4C59N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 5.8 mW @ 10 V CPU Power Delivery 30 V 52 A 8.5 mW

NTMFS4C290N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 6.95 mW @ 10 V Compliant 30 V 46 A 10.8 mW @ 4.5 V

NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features Fast Switching Times http //onsemi.com Low Gate Charge Low RDS(on) Low Inductance SOIC-8 Package V(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices 10 mW @ 10 V 30 V 17 A Applications 13.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters Synchronous Rectific

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT

NTMFS4923NE Power MOSFET 30 V, 91 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3.3 mW @ 10 V 91 A

NTMFS4899NF Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 5.0 mW @ 10 V