Справочник MOSFET. NTMFS5C423NLT1G

 

NTMFS5C423NLT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFS5C423NLT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7.4 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: DFN5

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NTMFS5C423NLT1G Datasheet (PDF)

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NTMFS5C423NLT1G
NTMFS5C423NLT1G

NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 V40

 2.1. Size:120K  onsemi
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NTMFS5C423NLT1G
NTMFS5C423NLT1G

NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 VPar

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NTMFS5C423NLT1G
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MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw

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ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 5.3. Size:172K  onsemi
ntmfs5c426n.pdf

NTMFS5C423NLT1G
NTMFS5C423NLT1G

MOSFET Power, SingleN-Channel40 V, 1.3 mW, 235 ANTMFS5C426NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 1.3 mW @ 10 V 235 AMAXIMUM RATINGS (TJ = 25C unless otherw

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