NTMFS5C450NLT3G. Аналоги и основные параметры
Наименование производителя: NTMFS5C450NLT3G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 110 ns
Cossⓘ - Выходная емкость: 1000 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5C450NLT3G
- подборⓘ MOSFET транзистора по параметрам
NTMFS5C450NLT3G даташит
ntmfs5c450nlt3g.pdf
NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par
ntmfs5c450nl.pdf
NTMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 2.8 mW @ 10 V Par
ntmfs5c450nt3g.pdf
NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other
ntmfs5c450n.pdf
NTMFS5C450N MOSFET Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25 C unless other
Другие MOSFET... NTMFS5C410NT3G , NTMFS5C423NLT1G , NTMFS5C426NLT1G , NTMFS5C426NT1G , NTMFS5C430NLT1G , NTMFS5C430NLT3G , NTMFS5C442NLT1G , NTMFS5C442NT3G , IRF830 , NTMFS5C450NT3G , NTMFS5C456NLT3G , NTMFS5C460NLT3G , NTMFS5C468NLT1G , NTMFS5C604NLT1G , NTMFS5C604NLT3G , NTMFS5C609NLT1G , NTMFS5C612NLT1G .
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Список транзисторов
Обновления
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