Справочник MOSFET. NTMFS5C456NLT3G

 

NTMFS5C456NLT3G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS5C456NLT3G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 87 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 590 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: DFN5
     - подбор MOSFET транзистора по параметрам

 

NTMFS5C456NLT3G Datasheet (PDF)

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 ntmfs5c456nlt3g.pdf pdf_icon

NTMFS5C456NLT3G

MOSFET Power, Single,N-Channel40 V, 3.7 mW, 87 ANTMFS5C456NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.7 mW @ 10 V40 V87 AMAXIMUM RATINGS (TJ = 25C unless other

 2.1. Size:175K  onsemi
 ntmfs5c456nl.pdf pdf_icon

NTMFS5C456NLT3G

MOSFET Power, Single,N-Channel40 V, 3.7 mW, 87 ANTMFS5C456NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.7 mW @ 10 V40 V87 AMAXIMUM RATINGS (TJ = 25C unless other

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 ntmfs5c450nlt3g.pdf pdf_icon

NTMFS5C456NLT3G

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

 5.2. Size:169K  1
 ntmfs5c450nt3g.pdf pdf_icon

NTMFS5C456NLT3G

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

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