NTMFS5C456NLT3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS5C456NLT3G
Маркировка: 5C456L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 55 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 87 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 28.8 nC
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 590 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0037 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5C456NLT3G
NTMFS5C456NLT3G Datasheet (PDF)
ntmfs5c456nlt3g.pdf
MOSFET Power, Single,N-Channel40 V, 3.7 mW, 87 ANTMFS5C456NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.7 mW @ 10 V40 V87 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c456nl.pdf
MOSFET Power, Single,N-Channel40 V, 3.7 mW, 87 ANTMFS5C456NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.7 mW @ 10 V40 V87 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c450nlt3g.pdf
NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar
ntmfs5c450nt3g.pdf
NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other
ntmfs5c450nl.pdf
NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar
ntmfs5c450n.pdf
NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other
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