Справочник MOSFET. FDP12N50NZ

 

FDP12N50NZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP12N50NZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP12N50NZ Datasheet (PDF)

 ..1. Size:377K  fairchild semi
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FDP12N50NZ

October 2010UniFET-IITMFDP12N50NZ / FDPF12N50NZN-Channel MOSFET 500V, 11.5A, 0.52Features Description RDS(on) = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 23nC )stripe, DMOS technology. Low Crss ( Typ. 14pF )This advanced tech

 ..2. Size:259K  inchange semiconductor
fdp12n50nz.pdfpdf_icon

FDP12N50NZ

Isc N-Channel MOSFET Transistor FDP12N50NZFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

 6.1. Size:446K  fairchild semi
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FDP12N50NZ

June 2007UniFETTMFDP12N50 / FDPF12N50tmN-Channel MOSFET 500V, 11.5A, 0.65Features Description RDS(on) = 0.55 (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 11pF)This advanced technology has be

 6.2. Size:695K  fairchild semi
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FDP12N50NZ

December 2007UniFETTMFDP12N50F / FDPF12N50FTtmN-Channel MOSFET 500V, 11.5A, 0.7Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 21nC)DMOS technology. Low Crss ( Typ. 11pF)This advance technolog

Другие MOSFET... STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 , STM4470E , FDP12N50 , IRF540 , FDP12N60NZ , STM4470A , FDP150N10 , STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 .

History: APT40N60B2CF | SM4508NHKP | FSL234R | SIHFL214 | IXFT320N10T2 | IRLI540GPBF | IXFP18N65X2

 

 
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