FDP20N50 - описание и поиск аналогов

 

FDP20N50. Аналоги и основные параметры

Наименование производителя: FDP20N50

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm

Тип корпуса: TO220

Аналог (замена) для FDP20N50

- подборⓘ MOSFET транзистора по параметрам

 

FDP20N50 даташит

 ..1. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdfpdf_icon

FDP20N50

April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especially

 ..2. Size:665K  fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdfpdf_icon

FDP20N50

November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC) This MOSFET is tailored to reduce on-state resistance, and to

 ..3. Size:772K  onsemi
fdp20n50 fdpf20n50 fdpf20n50t.pdfpdf_icon

FDP20N50

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:232K  inchange semiconductor
fdp20n50.pdfpdf_icon

FDP20N50

isc N-Channel MOSFET Transistor FDP20N50 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS These devices are well suited for high efficient switched mode power supplies and active power factor correction. ABSOLUTE MAXI

Другие MOSFET... FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , AON6414A , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 .

History: FDPF12N50T

 

 

 

 

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