FDP2710F085 - аналоги, параметры транзистора - Справочник транзисторов

FDP2710F085 даташит

7.1. Size:640K fairchild semi
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November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p

7.2. Size:453K fairchild semi
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February 2010 FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General Description This N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductor s advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10V especially tailored to minimize the on-state resistance and yet maintain superior switc

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.4. Size:419K onsemi
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FDP2710-F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m General Description This N-Channel MOSFET is produced using ON Semi- Features conductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50A yet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10V Appl