FDP33N25 - аналоги, параметры транзистора - Справочник транзисторов

FDP33N25 даташит

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October TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switching This advanced technolog

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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isc N-Channel MOSFET Transistor FDP33N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

Другие MOSFET... FDP2552 , FDP2572 , FDP2614 , STM4433A , FDP26N40 , STM4432 , FDP2710 , FDP2710F085 , IRF4905 , FDP3651U , STM4410A , FDP3672 , FDP3682 , STM301N , FDP42AN15A0 , FDP51N25 , FDP52N20 .