WM02DN60M3 - Даташиты. Аналоги. Основные параметры

Document: W0803061, Rev: F WM02DN60M3 Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN60M3 uses advanced power trench technology that has been especially tailored to 15.0 @VGS=4.5V minimize the on-state resistance This device is 20 6 16.5 @VGS=3.8V suitable for un-directional or bidirectional load switch, 19.0 @VGS=2.5V

Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR

WM02DN560Q Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN560Q uses advanced power trench 4.2 @VGS=4.5V technology that has been especially tailored to 4.3 @VGS=3.9V minimize the on-state resistance This device is 20 56 4.7 @VGS=3.1V suitable for un-directional or bidirectional load switch, 5.0 @VGS=2.5V facilitated

Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V

WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

WM02DN70M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN70M3 uses advanced power trenchtechnology that has been especially tailored to 11.5 @VGS=10V minimize the on-state resistance This device is 20 7 13 @VGS=4.5V suitable for un-directional or bidirectional load switch, 15 @VGS=2.5V facilitated by its common-drain config

WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit

WM02DN50M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN50M3 uses advanced power trenchtechnology that has been especially tailored to 21 @VGS=4.5V minimize the on-state resistance This device is 20 5 suitable for un-directional or bidirectional load switch, 26 @VGS=2.5V facilitated by its common-drain configuration Feat

Document: W0803165, Rev: F WM02DN110C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN110C uses advanced power trench 6.0 @VGS=4.5V technology that has been especially tailored to 6.2 @VGS=4.0V minimize the on-state resistance This device is 20 11 6.5 @VGS=3.7V suitable for un-directional or bidirectional load 7.0 @VG

WM02DN70A Dual N-Channel Enhancement MOSFET Description WM02DN70A uses advanced trench technology that V (V) I (A) R TYP (m) (BR)DSS D DS(on)has been especially tailored to minimize the on-state 11 @VGS=10V resistance. This device is suitable for un-directional 20 7 12 @VGS=4.5V or bidirectional load switch, facilitated by its common-drain configuration. 15 @VGS=2.5V

Document: W0803087, Rev: C WM02DN48A A Dual N-Channel MOSFET Features V = 20V, I = 4.8A DS DR

Document: W0803218, Rev: D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V