2SK2800 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2800
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 180 ns
Выходная емкость (Cd): 720 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: TO220AB
2SK2800 Datasheet (PDF)
2sk2800.pdf
2SK2800 Silicon N Channel MOS FET High Speed Power Switching REJ03G1035-0900 (Previous: ADE-208-513G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 15 m typ. High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2.
rej03g1035 2sk2800ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2804.pdf
2SK2804External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 5 ADV 2.0 4.0 V V = 10V, I = 1mATH DS DI 20 AD (
2sk2802.pdf
2SK2802Silicon N Channel MOS FETLow Frequency Power SwitchingADE-208-537C (Z)4th. EditionJun 1998Features Low on-resistanceRDS(on) = 0. 2 typ. (VGS = 4 V, ID = 100 mA) 2.5V gate drive devices. Small package (MPAK)OutlineMPAK31D2G 1. Source2. Gate3. DrainS2SK2802Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to sour
2sk2805.pdf
2SK2805External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 15 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 60
2sk2808-01mr.pdf
2SK2808-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
2sk2809-01mr.pdf
2SK2809-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
2sk2807-01l-01s.pdf
2SK2807-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingT-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum
2sk2806-01.pdf
2SK2806-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
2sk2803.pdf
2SK2803External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 3 ADV 2.0 4.0 V V = 10V, I = 1mATH DS DI 12 AD (
2sk2809.pdf
isc N-Channel MOSFET Transistor 2SK2809FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO
2sk2804.pdf
isc N-Channel MOSFET Transistor 2SK2804FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
2sk2803.pdf
isc N-Channel MOSFET Transistor 2SK2803FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
2sk2805.pdf
isc N-Channel MOSFET Transistor 2SK2805FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
Другие MOSFET... 2SK2736 , 2SK2737 , 2SK2738 , 2SK2753-01 , 2SK2778 , 2SK2779 , 2SK2788 , 2SK2796 , 20N50 , 2SK2802 , 2SK2803 , 2SK2804 , 2SK2805 , 2SK2848 , 2SK2849-01L , 2SK2849-01S , 2SK2851 .
