WML4N65D1B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WML4N65D1B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14.4 ns
Cossⓘ - Выходная емкость: 55.7 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
WML4N65D1B Datasheet (PDF)
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf

WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur
wml4n90d1 wmk4n90d1 wmm4n90d1.pdf

WML4N90D1WMK4N90D1 WMM4N90D1900V 4A 2.9 N-ch Power MOSFETDescriptionTO-220F TO-220 TO-263WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reduction TABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.GDSGSDSFeatures Typ.R =2.9
wml4n100d1.pdf

WML4N100D1 1000V 4A 2.2 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmaxD S Typ.R =2.2@V =10V DS(on) G
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDD2572 | BLF6G27-10G | IRFSZ24A | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV
History: FDD2572 | BLF6G27-10G | IRFSZ24A | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV



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