WMB043N10HGS - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMB043N10HGS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 131.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35.8 ns
Cossⓘ - Выходная емкость: 740 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: PDFN5060-8L
Аналог (замена) для WMB043N10HGS
WMB043N10HGS Datasheet (PDF)
wmb043n10hgs.pdf

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10HGS uses Wayon's advanced power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
wmb043n10lgs.pdf

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L
wmb049n12hg2.pdf

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN
wmb042dn03lg2.pdf

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a
Другие MOSFET... WMB032N04LG2 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , 2N7000 , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 .



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