WMB099N10LG2 - аналоги и даташиты транзистора

 

WMB099N10LG2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMB099N10LG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0099 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB099N10LG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB099N10LG2 Datasheet (PDF)

 ..1. Size:979K  way-on
 wmb099n10lg2.pdf pdf_icon

WMB099N10LG2

WMB099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB099N10LG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This Gsdevice is well suited for high efficiency fast switching applicationsPDFN5060

 3.1. Size:601K  way-on
 wmb099n10lgs.pdf pdf_icon

WMB099N10LG2

WMB099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LF

 5.1. Size:546K  way-on
 wmb099n10hgs.pdf pdf_icon

WMB099N10LG2

WMB099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB099N10HGS uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN5060

 9.1. Size:619K  way-on
 wmb093n15hg4.pdf pdf_icon

WMB099N10LG2

WMB093N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB093N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , IRFZ24N , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 .

History: FQP33N10L | IRFS7734PBF | IRF3205A | FHD80N07C | CEM2401 | 12N65B

 

 
Back to Top

 


 
.