Справочник MOSFET. WMB119N12HG4

 

WMB119N12HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMB119N12HG4
   Маркировка: 119N12H4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23.7 nC
   trⓘ - Время нарастания: 5.3 ns
   Cossⓘ - Выходная емкость: 252 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: PDFN5060-8L

 Аналог (замена) для WMB119N12HG4

 

 

WMB119N12HG4 Datasheet (PDF)

 ..1. Size:636K  way-on
 wmb119n12hg4.pdf

WMB119N12HG4 WMB119N12HG4

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 5.1. Size:640K  way-on
 wmb119n12lg4.pdf

WMB119N12HG4 WMB119N12HG4

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:519K  way-on
 wmb119n10lg2.pdf

WMB119N12HG4 WMB119N12HG4

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf

WMB119N12HG4 WMB119N12HG4

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:443K  way-on
 wmb115n15hg4.pdf

WMB119N12HG4 WMB119N12HG4

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

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