Справочник MOSFET. FDP8874

 

FDP8874 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP8874
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 114 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FDP8874

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDP8874 Datasheet (PDF)

 ..1. Size:469K  fairchild semi
fdp8874.pdfpdf_icon

FDP8874

NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

 ..2. Size:519K  onsemi
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FDP8874

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:283K  inchange semiconductor
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FDP8874

isc N-Channel MOSFET Transistor FDP8874FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 53m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.1. Size:308K  fairchild semi
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FDP8874

November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

Другие MOSFET... FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , 75N75 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ .

History: IRF9540 | AON6418 | CEM2187 | 2N4867 | HFS8N60U | HUF75307D3ST

 

 
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