Справочник MOSFET. WMJ80N65F2

 

WMJ80N65F2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMJ80N65F2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 410 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

WMJ80N65F2 Datasheet (PDF)

 ..1. Size:544K  way-on
wmj80n65f2.pdfpdf_icon

WMJ80N65F2

WM F2 MJ80N65F 650V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 6.1. Size:545K  way-on
wmj80n65c4.pdfpdf_icon

WMJ80N65F2

WM C4 MJ80N65C 650V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

 7.1. Size:545K  way-on
wmj80n60f2.pdfpdf_icon

WMJ80N65F2

WM F2 MJ80N60F 600V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 7.2. Size:545K  way-on
wmj80n60c4.pdfpdf_icon

WMJ80N65F2

WM C4 MJ80N60C 600V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI9435DY-T1 | SKI04024

 

 
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