Справочник MOSFET. WMK023N08HGS

 

WMK023N08HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK023N08HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 329 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 270 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 84 ns
   Cossⓘ - Выходная емкость: 1610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

WMK023N08HGS Datasheet (PDF)

 ..1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK023N08HGS

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

 9.1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK023N08HGS

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 9.2. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK023N08HGS

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 9.3. Size:596K  way-on
 wmk020n06hg4.pdf pdf_icon

WMK023N08HGS

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 60V, I = 25

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History: VBZE80N06 | SSW7N60B | IPD50R280CE | 2SJ602-Z | ZVN4206GTC | NDT6N70 | BUK9608-55

 

 
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