WMK023N08HGS - описание и поиск аналогов

 

WMK023N08HGS. Аналоги и основные параметры

Наименование производителя: WMK023N08HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 329 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 270 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 84 ns

Cossⓘ - Выходная емкость: 1610 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK023N08HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMK023N08HGS даташит

 ..1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK023N08HGS

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS

 9.1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK023N08HGS

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A

 9.2. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK023N08HGS

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2

 9.3. Size:596K  way-on
 wmk020n06hg4.pdf pdf_icon

WMK023N08HGS

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 60V, I = 25

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , 4435 , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS .

History: 2SK766

 

 

 

 

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