Справочник MOSFET. WMK030N06HG4

 

WMK030N06HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK030N06HG4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 208.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 184 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 68 nC
   Время нарастания (tr): 17.8 ns
   Выходная емкость (Cd): 1053 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0032 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK030N06HG4

 

 

WMK030N06HG4 Datasheet (PDF)

 ..1. Size:651K  way-on
wmk030n06hg4.pdf

WMK030N06HG4
WMK030N06HG4

WMK030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18

 5.1. Size:634K  way-on
wmk030n06lg4.pdf

WMK030N06HG4
WMK030N06HG4

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18

 9.1. Size:669K  way-on
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf

WMK030N06HG4
WMK030N06HG4

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

 9.2. Size:619K  way-on
wmk037n10hgs.pdf

WMK030N06HG4
WMK030N06HG4

WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 170A

 9.3. Size:644K  way-on
wmk036n12hgs.pdf

WMK030N06HG4
WMK030N06HG4

WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I = 188A

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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