WMK071N15HG2 - описание и поиск аналогов

WMK071N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMK071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 150V, I = 1

WM 2, WMN07N MM07N100C ML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100C MO07N100C N100C2, WM C2 1000V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

WMM0 65C4, MO07N65C 07N65C4, WML07N6 WM C4 WMN0 65C4, MK07N65C 07N65C4, WMP07N6 WM C4 650V 0.96 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

WM 2, WMN07N MM07N105C ML07N105C2 N105C2, WM C2 WMJ07N105C2, WM C2, WMP07N MK07N105C MO07N105C N105C2, WM C2 1050V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low

WMK072N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description WMK072N12HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 120V, I =

WMK072N12LG2 120V N-Channel Enhancement Mode Power MOSFET Description WMK072N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 120V, I =

WMM0 70C4, MO07N70C 07N70C4, WML07N7 WM C4 WMN0 70C4, MK07N70C 07N70C4, WMP07N7 WM C4 700V 0.96 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

WMM0 60C4, MO07N60C 07N60C4, WML07N6 WM C4 WMN0 60C4, MK07N60C 07N60C4, WMP07N6 WM C4 600V 0.96 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf