WML15N50D1B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WML15N50D1B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 195 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
WML15N50D1B Datasheet (PDF)
wmk15n50d1b wml15n50d1b.pdf

WMK15N50D1B WML15N50D1B 500V 15A 0.37 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in TAB on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.37@V
wml15n25t2.pdf

WML15N25T2 250V N-Channel Enhancement Mode Power MOSFET DescriptionWML15N25T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features GDS V = 250V, I = 15A DS DTO-220FR
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STU448S | NVMFS5C628N | OSG65R460FZF | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT
History: STU448S | NVMFS5C628N | OSG65R460FZF | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT



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