WMK80N08TS - описание и поиск аналогов

 

WMK80N08TS. Аналоги и основные параметры

Наименование производителя: WMK80N08TS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 133 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 75 ns

Cossⓘ - Выходная емкость: 220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK80N08TS

- подборⓘ MOSFET транзистора по параметрам

 

WMK80N08TS даташит

 ..1. Size:614K  way-on
wmk80n08ts.pdfpdf_icon

WMK80N08TS

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 80V, I = 80A DS D R

 7.1. Size:647K  way-on
wmk80n04t1.pdfpdf_icon

WMK80N08TS

WMK80N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMK80NN04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 40V, I = 80A DS D TO-220 R

 7.2. Size:623K  way-on
wmk80n06ts.pdfpdf_icon

WMK80N08TS

WMK80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G V = 60V, I = 80A DS D TO-220 R

 9.1. Size:927K  way-on
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdfpdf_icon

WMK80N08TS

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET Description WMOSTM S is Wayon s new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

Другие MOSFET... WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , WML7N65D1B , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , IRFP460 , WMK90N08TS , WMK9N50D1B , WML9N50D1B , WMO9N50D1B , WML030N06HG4 , WML03N80M3 , WMN03N80M3 , WMM03N80M3 .

History: IRF9243 | SM1A18NSQG | SVF4N65F

 

 

 

 

↑ Back to Top
.