WMK90N08TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK90N08TS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 135.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 111 nC
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK90N08TS
WMK90N08TS Datasheet (PDF)
wmk90n08ts.pdf
WMK90N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK90N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 90A DS D R
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Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100