WMO03N80M3. Аналоги и основные параметры

Наименование производителя: WMO03N80M3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 29 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 11 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO03N80M3

- подборⓘ MOSFET транзистора по параметрам

 

WMO03N80M3 даташит

 ..1. Size:669K  way-on
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdfpdf_icon

WMO03N80M3

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 9.1. Size:630K  way-on
wmo030n06lg4.pdfpdf_icon

WMO03N80M3

WMO030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 60V, I = 130A

 9.2. Size:655K  way-on
wmo030n06hg4.pdfpdf_icon

WMO03N80M3

WMO030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMO030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. TO-252 Features V = 60V, I = 13

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