WML08N65EM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WML08N65EM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 24 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.93 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
WML08N65EM Datasheet (PDF)
wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdf

WML08 WMK08N68N65EM, W 65EM, WMM08N65EM WMN08 WMP08N68N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is a
wmm08n65c4 wml08n65c4 wmo08n65c4 wmn08n65c4 wmp08n65c4 wmk08n65c4.pdf

WMM0 65C4, MO08N65C08N65C4, WML08N6 WM C4 WMN0 65C4, MK08N65C08N65C4, WMP08N6 WM C4 650V 0.65 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc
wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM
wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: G1008 | NVMFS5C628N | STF19NF20 | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT
History: G1008 | NVMFS5C628N | STF19NF20 | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT



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