WMP08N65EM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMP08N65EM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 24 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.93 Ohm
Тип корпуса: TO251
Аналог (замена) для WMP08N65EM
WMP08N65EM Datasheet (PDF)
wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdf

WML08 WMK08N68N65EM, W 65EM, WMM08N65EM WMN08 WMP08N68N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is a
wmm08n65c4 wml08n65c4 wmo08n65c4 wmn08n65c4 wmp08n65c4 wmk08n65c4.pdf

WMM0 65C4, MO08N65C08N65C4, WML08N6 WM C4 WMN0 65C4, MK08N65C08N65C4, WMP08N6 WM C4 650V 0.65 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc
wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM
wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM
Другие MOSFET... WMO07N105C2 , WMP07N105C2 , WMK07N105C2 , WML080N10HG2 , WML08N65EM , WMK08N65EM , WMM08N65EM , WMN08N65EM , SKD502T , WMO08N65EM , WML08N70EM , WMK08N70EM , WMM08N70EM , WMN08N70EM , WMP08N70EM , WMO08N70EM , WML08N80M3 .
History: TMC7N60H | WPM1480 | WMM90R1K5S | SSP50R140SFD | SMMBFJ310LT3G | SFP040N100C3
History: TMC7N60H | WPM1480 | WMM90R1K5S | SSP50R140SFD | SMMBFJ310LT3G | SFP040N100C3



Список транзисторов
Обновления
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004