Справочник MOSFET. WMO10N70D1

 

WMO10N70D1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMO10N70D1
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 156 W
   Предельно допустимое напряжение сток-исток |Uds|: 700 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 10 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 25 nC
   Время нарастания (tr): 41 ns
   Выходная емкость (Cd): 120 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.05 Ohm
   Тип корпуса: TO252

 Аналог (замена) для WMO10N70D1

 

 

WMO10N70D1 Datasheet (PDF)

 ..1. Size:2320K  way-on
wml10n70d1 wmo10n70d1.pdf

WMO10N70D1 WMO10N70D1

WML10N70D1 WMO10N70D1700V 10A 0.88 N-ch Power MOSFETDescriptionTO-220F TO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.G SDSFeatures Typ.R =0.88@V =10VDS(on) GS 1

 6.1. Size:668K  way-on
wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf

WMO10N70D1 WMO10N70D1

WMM10N70C4, WML10N7 WM C4 70C4, MO10N70CWMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 6.2. Size:660K  way-on
wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf

WMO10N70D1 WMO10N70D1

WML10 WMK10N70N70EM, W 70EM, WMM10N70EM WMN10 WMP10N70N70EM, W 70EM, WMO10N70EM 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 8.1. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf

WMO10N70D1 WMO10N70D1

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 8.2. Size:677K  way-on
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WMO10N70D1 WMO10N70D1

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 8.3. Size:678K  way-on
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WMO10N70D1 WMO10N70D1

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

 8.4. Size:659K  way-on
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf

WMO10N70D1 WMO10N70D1

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 8.5. Size:670K  way-on
wmm10n60c4 wml10n60c4 wmo10n60c4 wmn10n60c4 wmp10n60c4 wmk10n60c4.pdf

WMO10N70D1 WMO10N70D1

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 8.6. Size:675K  way-on
wml10n80m3 wmn10n80m3 wmm10n80m3 wmo10n80m3 wmp10n80m3 wmk10n80m3.pdf

WMO10N70D1 WMO10N70D1

WML10N80M3, W 80M3, WM M3 WMN10N8 MM10N80MWMO1 80M3, WM M3 10N80M3, WMP10N8 MK10N80M 800V 0.86 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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