WML10N70EM. Аналоги и основные параметры

Наименование производителя: WML10N70EM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

Cossⓘ - Выходная емкость: 12.8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220F

Аналог (замена) для WML10N70EM

- подборⓘ MOSFET транзистора по параметрам

 

WML10N70EM даташит

 ..1. Size:660K  way-on
 wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf pdf_icon

WML10N70EM

WML10 WMK10N7 0N70EM, W 70EM, WMM10N70EM WMN10 WMP10N7 0N70EM, W 70EM, WMO10N70EM 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate

 6.1. Size:2320K  way-on
 wml10n70d1 wmo10n70d1.pdf pdf_icon

WML10N70EM

WML10N70D1 WMO10N70D1 700V 10A 0.88 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G S D S Features Typ.R =0.88 @V =10V DS(on) GS 1

 6.2. Size:668K  way-on
 wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf pdf_icon

WML10N70EM

WMM10N70C4, WML10N7 WM C4 70C4, MO10N70C WMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM

 8.1. Size:1354K  way-on
 wml10n65d1b wmk10n65d1b.pdf pdf_icon

WML10N70EM

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WML10N65EM, WMK10N65EM, WMM10N65EM, WMN10N65EM, WMP10N65EM, WMO10N65EM, WML10N70D1, WMO10N70D1, IRF540N, WMK10N70EM, WMM10N70EM, WMN10N70EM, WMP10N70EM, WMO10N70EM, WML10N80D1, WMJ10N80D1, WML10N80M3