WMK10N80M3 - описание и поиск аналогов

 

WMK10N80M3. Аналоги и основные параметры

Наименование производителя: WMK10N80M3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 85 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 28 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.03 Ohm

Тип корпуса: TO220

Аналог (замена) для WMK10N80M3

- подборⓘ MOSFET транзистора по параметрам

 

WMK10N80M3 даташит

 ..1. Size:675K  way-on
wml10n80m3 wmn10n80m3 wmm10n80m3 wmo10n80m3 wmp10n80m3 wmk10n80m3.pdfpdf_icon

WMK10N80M3

WML10N80M3, W 80M3, WM M3 WMN10N8 MM10N80M WMO1 80M3, WM M3 10N80M3, WMP10N8 MK10N80M 800V 0.86 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 8.1. Size:1354K  way-on
wml10n65d1b wmk10n65d1b.pdfpdf_icon

WMK10N80M3

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 8.2. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdfpdf_icon

WMK10N80M3

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65C WMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM

 8.3. Size:677K  way-on
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdfpdf_icon

WMK10N80M3

WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga

Другие MOSFET... WMO10N70EM , WML10N80D1 , WMJ10N80D1 , WML10N80M3 , WMN10N80M3 , WMM10N80M3 , WMO10N80M3 , WMP10N80M3 , IRF3710 , WML115N15HG4 , WML11N65SR , WMK11N65SR , WMM11N65SR , WMN11N65SR , WMP11N65SR , WMO11N65SR , WML11N70SR .

 

 

 

 

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