WMM11N70SR - описание и поиск аналогов

 

WMM11N70SR. Аналоги и основные параметры

Наименование производителя: WMM11N70SR

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 63 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 22 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm

Тип корпуса: TO263

Аналог (замена) для WMM11N70SR

- подборⓘ MOSFET транзистора по параметрам

 

WMM11N70SR даташит

 ..1. Size:664K  way-on
wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdfpdf_icon

WMM11N70SR

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S 70SR, WM SR 700V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W

 8.1. Size:674K  way-on
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdfpdf_icon

WMM11N70SR

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80M WMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

 8.2. Size:665K  way-on
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdfpdf_icon

WMM11N70SR

WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S 65SR, WM SR 650V 0.5 Su nction P uper Jun Power MOSFET Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge performanc W

 9.1. Size:709K  way-on
wmm115n15hg4.pdfpdf_icon

WMM11N70SR

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I =

Другие MOSFET... WML11N65SR , WMK11N65SR , WMM11N65SR , WMN11N65SR , WMP11N65SR , WMO11N65SR , WML11N70SR , WMK11N70SR , IRF9540 , WMN11N70SR , WMP11N70SR , WMO11N70SR , WML11N80M3 , WMN11N80M3 , WMM11N80M3 , WMO11N80M3 , WMP11N80M3 .

History: WML11N70SR | WML125N12LG2 | WML10N80D1

 

 

 

 

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