FDPF16N50T - описание и поиск аналогов

November 2013 FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m Features Description RDS(on) = 380 m (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (

October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 32nC) DMOS technology. Low Crss ( Typ. 20pF) This advance tech

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur