WML12N65D1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WML12N65D1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 35 nC
trⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.74 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML12N65D1
WML12N65D1 Datasheet (PDF)
wml12n65d1 wmk12n65d1.pdf
WML12N65D1 WMK12N65D1650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =10V
wml12n65d1b wmk12n65d1b.pdf
WML12N65D1B WMK12N65D1B650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =1
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WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
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WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C
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WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918