WMK12N65D1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMK12N65D1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 150 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.74 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK12N65D1
WMK12N65D1 Datasheet (PDF)
wml12n65d1 wmk12n65d1.pdf

WML12N65D1 WMK12N65D1650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =10V
wml12n65d1b wmk12n65d1b.pdf

WML12N65D1B WMK12N65D1B650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =1
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C
Другие MOSFET... WMJ12N100C2 , WMK12N100C2 , WML12N105C2 , WMM12N105C2 , WMN12N105C2 , WMJ12N105C2 , WMK12N105C2 , WML12N65D1 , AO4407 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , WMN12N80M3 , WMM12N80M3 , WMO12N80M3 , WMP12N80M3 , WMK12N80M3 .
History: SSS45N20B | SPD22N08S2L-50 | MSAFZ50N10A | IRL7833LPBF | IPI530N15N3 | SFR9210 | IPP110N06LG
History: SSS45N20B | SPD22N08S2L-50 | MSAFZ50N10A | IRL7833LPBF | IPI530N15N3 | SFR9210 | IPP110N06LG



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