Справочник MOSFET. WMK12N65D1B

 

WMK12N65D1B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK12N65D1B
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 156 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 12 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 44.7 nC
   Время нарастания (tr): 33 ns
   Выходная емкость (Cd): 161 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.74 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK12N65D1B

 

 

WMK12N65D1B Datasheet (PDF)

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wml12n65d1b wmk12n65d1b.pdf

WMK12N65D1B
WMK12N65D1B

WML12N65D1B WMK12N65D1B650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =1

 4.1. Size:828K  way-on
wml12n65d1 wmk12n65d1.pdf

WMK12N65D1B
WMK12N65D1B

WML12N65D1 WMK12N65D1650V 12A 0.58 N-ch Power MOSFETDescriptionTO-220 TO-220FWMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GFeatures DGSDS V =700V@TDS jmax Typ.R =0.58@V =10V

 8.1. Size:923K  way-on
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WMK12N65D1B
WMK12N65D1B

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET DescriptionWMOSTM C2 is Wayons 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic

 8.2. Size:653K  way-on
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

WMK12N65D1B
WMK12N65D1B

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

 8.3. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMK12N65D1B
WMK12N65D1B

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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