WMO13N80M3. Аналоги и основные параметры
Наименование производителя: WMO13N80M3
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 54 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO13N80M3
- подборⓘ MOSFET транзистора по параметрам
WMO13N80M3 даташит
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Другие IGBT... WMK13N70EM, WMM13N70EM, WMN13N70EM, WMP13N70EM, WMO13N70EM, WML13N80M3, WMN13N80M3, WMM13N80M3, 2N60, WMP13N80M3, WMK13N80M3, WML14N60C4, WMK14N60C4, WMM14N60C4, WMN14N60C4, WMP14N60C4, WMO14N60C4
History: WMO10N70D1 | WMO13N65EM | WMN11N65SR | WMO10N70EM | WMO14N65C4
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