Справочник MOSFET. WMO14N70C4

 

WMO14N70C4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMO14N70C4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 21.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для WMO14N70C4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMO14N70C4 Datasheet (PDF)

 ..1. Size:672K  way-on
wml14n70c4 wmk14n70c4 wmm14n70c4 wmn14n70c4 wmp14n70c4 wmo14n70c4.pdfpdf_icon

WMO14N70C4

WML1 MM14N70C14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 8.1. Size:672K  way-on
wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdfpdf_icon

WMO14N70C4

WML1 MM14N65C14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 8.2. Size:670K  way-on
wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdfpdf_icon

WMO14N70C4

WML1 MM14N60C14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 9.1. Size:993K  way-on
wmo140nv6lg4.pdfpdf_icon

WMO14N70C4

WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50

Другие MOSFET... WMN14N65C4 , WMP14N65C4 , WMO14N65C4 , WML14N70C4 , WMK14N70C4 , WMM14N70C4 , WMN14N70C4 , WMP14N70C4 , HY1906P , WML15N25T2 , WML15N60C4 , WMK15N60C4 , WMM15N60C4 , WMN15N60C4 , WMP15N60C4 , WMO15N60C4 , WML15N65C2 .

History: SI4831DY | AM10N30-600I | NTMS5P02R2SG

 

 
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