Справочник MOSFET. FDPF20N50

 

FDPF20N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDPF20N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 45.6 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FDPF20N50

 

 

FDPF20N50 Datasheet (PDF)

 ..1. Size:469K  fairchild semi
fdp20n50 fdpf20n50.pdf

FDPF20N50 FDPF20N50

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

 ..2. Size:665K  fairchild semi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

FDPF20N50 FDPF20N50

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

 ..3. Size:772K  onsemi
fdp20n50 fdpf20n50 fdpf20n50t.pdf

FDPF20N50 FDPF20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:838K  fairchild semi
fdp20n50f fdpf20n50ft.pdf

FDPF20N50 FDPF20N50

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

 0.2. Size:494K  onsemi
fdp20n50f fdpf20n50ft.pdf

FDPF20N50 FDPF20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:557K  fairchild semi
fdpf2710t.pdf

FDPF20N50 FDPF20N50

September 2007FDPF2710T250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 25A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

 9.2. Size:296K  fairchild semi
fdp24n40 fdpf24n40.pdf

FDPF20N50 FDPF20N50

December 2007UniFETTMFDP24N40 / FDPF24N40N-Channel MOSFET 400V, 24A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 46nC)stripe, DMOS technology. Low Crss ( Typ. 25pF)This advanced technology has b

 9.3. Size:435K  fairchild semi
fdpf2d3n10c fdp2d3n10c.pdf

FDPF20N50 FDPF20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:567K  fairchild semi
fdp26n40 fdpf26n40.pdf

FDPF20N50 FDPF20N50

February 2008UniFETTMFDP26N40 / FDPF26N40tmN-Channel MOSFET 400V, 26A, 0.16Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 30pF)This advanced technology h

 9.5. Size:432K  onsemi
fdp2d3n10c fdpf2d3n10c.pdf

FDPF20N50 FDPF20N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:274K  inchange semiconductor
fdpf2d3n10c.pdf

FDPF20N50 FDPF20N50

isc N-Channel MOSFET Transistor FDPF2D3N10CFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 2.3m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

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