WMO25N50C4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO25N50C4
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 135 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 23 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22.1 nC
Время нарастания (tr): 37 ns
Выходная емкость (Cd): 48 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO25N50C4
WMO25N50C4 Datasheet (PDF)
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wmo25n10t1.pdf
WMO25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 100V, I = 25A DS D R
wmo25n06ts.pdf
WMO25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 25A DS DR
wmo25p03ts.pdf
WMO25P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -30V, I = -25A DS D TO-252R
wmo25p04ts.pdf
WMO25P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -25A GDS DTO-252R
wmo25p06t1.pdf
WMO25P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO25P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -25A DS DTO-252R
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
