WMK25N50C4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK25N50C4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22.1 nC
trⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 48 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK25N50C4
WMK25N50C4 Datasheet (PDF)
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf
WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
wmk25n10t1.pdf
WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R
wmk25n06ts.pdf
WMK25N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 25A DS D R
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf
WML25N8 MM25N80M80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM
wml25n70em wmk25n70em wmn25n70em wmm25n70em wmj25n70em.pdf
WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP9974GH-HF | HMS4264
History: AP9974GH-HF | HMS4264
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918