WMN25N70EM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMN25N70EM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 59 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO262
Аналог (замена) для WMN25N70EM
WMN25N70EM Datasheet (PDF)
wml25n70em wmk25n70em wmn25n70em wmm25n70em wmj25n70em.pdf

WML25N7 MK25N70EM W 70EM, WMWMN25 WMM25N7 MJ25N70EM 5N70EM, W 70EM, WM 700V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf

WML25N8 MM25N80M80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM
Другие MOSFET... WMJ25N50C4 , WML25N65EM , WMK25N65EM , WMN25N65EM , WMM25N65EM , WMJ25N65EM , WML25N70EM , WMK25N70EM , RU6888R , WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , WMN25N80M3 , WMJ25N80M3 , WMK25N80M3 , WML26N60F2 .
History: NCE0224K | S70N08R



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