WML26N60F2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WML26N60F2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 48 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
WML26N60F2 Datasheet (PDF)
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf

WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf

WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SE4060 | ZXMN0545G4 | IPA600N25NM3S
History: SE4060 | ZXMN0545G4 | IPA600N25NM3S



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