WMK26N60F2
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK26N60F2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 135
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 18
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 22.1
nC
trⓘ -
Время нарастания: 37
ns
Cossⓘ - Выходная емкость: 48
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.21
Ohm
Тип корпуса:
TO220
Аналог (замена) для WMK26N60F2
WMK26N60F2
Datasheet (PDF)
..1. Size:679K way-on
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
6.1. Size:681K way-on
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
6.2. Size:681K way-on
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
7.1. Size:685K way-on
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
7.2. Size:682K way-on
wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65FWMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa
7.3. Size:659K way-on
wml26n65sr wmk26n65sr wmn26n65sr wmm26n65sr wmj26n65sr.pdf WML26N6 MK26N65S65SR, WM SR WMN2 MJ26N65S26N65SR, WMM26N65SR, WM SR 650V 0.17 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM SR is
7.4. Size:685K way-on
wml26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmo26n65c4 wmj26n65c4.pdf WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65CWMN2 MJ26N65C26N65C4, WMM26N65C4, WM C4 650V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM
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