STF8236 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STF8236
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: DFN2X2
STF8236 Datasheet (PDF)
stf8236.pdf
GreenProductSTF8236aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.22.5 @ VGS=4.0VESD Protected.20V 6A 23.0 @ VGS=3.7V25.0 @ VGS=3.1V29.0 @ VGS=2.5VP IN 1PIN
stf8234.pdf
GreenProductSTF8234aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.5.2 @ VGS=4.5VSuface Mount Package.5.3 @ VGS=4.0V 20V 14A 5.4 @ VGS=3.7V ESD Protected.5.9 @ VGS=3.1V6.8 @ VGS=2.5VD DDDG GST D
stf8233.pdf
GreenProductSTF8233aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.2 @ VGS=4.5VSuface Mount Package.7.5 @ VGS=4.0V 20V 11A 8.2 @ VGS=3.7V ESD Protected.9.0 @ VGS=3.1V10.2 @ VGS=2.5VG2Bottom Drain Con
stf826 stn826.pdf
STF826STN826PNP MEDIUM POWER TRANSISTORSFeatures SURFACE MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 IN COMPLIANCE WITH THE 2002/93/EC 3EUROPEAN DIRECTIVE21Applications VOLTAGE REGULATION SOT-223 SOT-89 RELAY DRIVER GENERIC SWITCHDescriptionInternal Schematic DiagramThe STF826 and STN826 ar
stf8220.pdf
S T F 8220S amHop Microelectronics C orp. Oct.23 2006 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( mW ) MaxR ugged and reliable.20 @ V G S = 4.0V20V 7AS urface Mount Package.28 @ V G S = 2.5VE S D P rotected. S2Bottom Drain Contact S2S1 4
stf8211.pdf
GreenProductSTF8211aS mHop Microelectronics C orp.Ver 1.5Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.13.5 @ VGS=4.0VSuface Mount Package.20V 8A20.0 @ VGS=2.5VESD Protected.G2Bottom Drain Contact (D1/D2)S234G1 G2S2D1/D2G1S
stf8209a.pdf
GreerrPPrPrProSTF8209AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.23.0 @ VGS=4.0V20V 6.5A 24.0 @ VGS=3.7V ESD Protected.27.5 @ VGS=3.1V33.5 @ VGS=2.5VBot
stf8209.pdf
GrPPrPPSTF8209aS mHop Microelectronics C orp.Ver 2.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.22.5 @ VGS=4.0V20V 6.5A 23.5 @ VGS=3.7V ESD Protected.27.5 @ VGS=3.1V33.5 @ VGS=2.5VG2Bottom Drai
stf8204.pdf
GreenProductSTF8204aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.0 @ VGS=4.5VSuface Mount Package.9.5 @ VGS=4.0V20V 9.5A 10.0 @ VGS=3.7V ESD Protected.11.2 @ VGS=3.1V13.5 @ VGS=2.5VG2Bottom Drain C
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