WMN28N50C4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMN28N50C4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 48 ns
Cossⓘ - Выходная емкость: 65 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: TO262
Аналог (замена) для WMN28N50C4
WMN28N50C4 Datasheet (PDF)
wml28n50c4 wmk28n50c4 wmn28n50c4 wmm28n50c4 wmj28n50c4.pdf

WML28N5 WM C4 50C4, MK28N50CWMN2 MJ28N50C28N50C4, WMM28N50C4, WM C4 500V 0.1 S TSuper Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate ce.
wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf

WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin
wml28n60c4 wmk28n60c4 wmn28n60c4 wmm28n60c4 wmj28n60c4.pdf

WML28N6 WM C4 60C4, MK28N60CWMN2 MJ28N60C28N60C4, WMM28N60C4, WM C4 600V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c
wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf

WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c
Другие MOSFET... WMJ26N65F2 , WML26N65SR , WMK26N65SR , WMN26N65SR , WMM26N65SR , WMJ26N65SR , WML28N50C4 , WMK28N50C4 , IRF540 , B20N15D , DG4N60 , CS55N25A8R-G , CS55N25AKR , WMM28N50C4 , WMJ28N50C4 , WML28N60F2 , WMK28N60F2 .
History: SMG2343 | AP2310S | STF6N65K3 | IRFS232 | PTQ45P02 | SD214
History: SMG2343 | AP2310S | STF6N65K3 | IRFS232 | PTQ45P02 | SD214



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