Справочник MOSFET. WML4N100D1

 

WML4N100D1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WML4N100D1
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 33 W
   Предельно допустимое напряжение сток-исток |Uds|: 1000 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 4 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 35 nC
   Время нарастания (tr): 8.8 ns
   Выходная емкость (Cd): 115 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для WML4N100D1

 

 

WML4N100D1 Datasheet (PDF)

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 wml4n100d1.pdf

WML4N100D1 WML4N100D1

WML4N100D1 1000V 4A 2.2 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmaxD S Typ.R =2.2@V =10V DS(on) G

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 wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf

WML4N100D1 WML4N100D1

WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur

 9.2. Size:1980K  way-on
 wml4n90d1 wmk4n90d1 wmm4n90d1.pdf

WML4N100D1 WML4N100D1

WML4N90D1WMK4N90D1 WMM4N90D1900V 4A 2.9 N-ch Power MOSFETDescriptionTO-220F TO-220 TO-263WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reduction TABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.GDSGSDSFeatures Typ.R =2.9

 9.3. Size:1434K  way-on
 wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf

WML4N100D1 WML4N100D1

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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