WML80R160S - Даташиты. Аналоги. Основные параметры
Наименование производителя: WML80R160S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 44 ns
Cossⓘ - Выходная емкость: 56 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML80R160S
WML80R160S Datasheet (PDF)
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf
WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
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Другие MOSFET... WMJ53N65C4 , WML53N65F2 , WMK53N65F2 , WMN53N65F2 , WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , WML7N80D1 , IRF830 , WMK80R160S , WMN80R160S , WMM80R160S , WMJ80R160S , WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S .
History: 2SK890 | WMK80N04T1
History: 2SK890 | WMK80N04T1
Список транзисторов
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