Справочник MOSFET. WMM80R260S

 

WMM80R260S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMM80R260S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 51 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.255 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для WMM80R260S

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMM80R260S Datasheet (PDF)

 ..1. Size:656K  way-on
 wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf pdf_icon

WMM80R260S

WML80R MK80R260R260S, WM 0S WMN , WMM80R MJ80R260N80R260S, R260S, WM 0S 800V 0.22 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is

 8.1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf pdf_icon

WMM80R260S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.2. Size:672K  way-on
 wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf pdf_icon

WMM80R260S

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST

 8.3. Size:668K  way-on
 wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdf pdf_icon

WMM80R260S

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S , WMJ80R160S , WML80R260S , WMK80R260S , WMN80R260S , 2N7002 , WMJ80R260S , WML80R350S , WMK80R350S , WMN80R350S , WMM80R350S , WMJ80R350S , WML80R480S , WMO80R480S .

History: FQB5N60CTM_WS | NCEP3045GU | IPD70R600CE | MMFTN3018W | APM8010K | RUH1H138S | KIA18N50H-220F

 

 
Back to Top

 


 
.